DatasheetsPDF.com

2SB948

Panasonic Semiconductor
Part Number 2SB948
Manufacturer Panasonic Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 ...
Datasheet PDF File 2SB948 PDF File

2SB948
2SB948

Overview
Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q q q 16.
7±0.
3 14.
0±0.
5 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB948 2SB948A 2SB948 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SB948A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.
0 7.
5±0.
2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB948 2SB948A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.
33A IC = –10A, IB = – 0.
33A VCE = –10V, IC = – 0.
5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.
1A, IB2 = 0.
1A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.
6 –1.
5 100 400 0.
1 0.
5 0.
1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 –12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=–100mA –10 –80mA –60mA –50mA –40mA –6 –35mA –30mA –25mA –4 –20mA –15...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)