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AM4502C

BYD
Part Number AM4502C
Manufacturer BYD
Description P & N-Channel MOSFET
Published Dec 21, 2011
Detailed Description www.DataSheet.co.kr AM4502C BYD Microelectronics Co., Ltd. P & N-Channel MOSFET General Description The AM4502C uses ...
Datasheet PDF File AM4502C PDF File

AM4502C
AM4502C

Overview
www.
DataSheet.
co.
kr AM4502C BYD Microelectronics Co.
, Ltd.
P & N-Channel MOSFET General Description The AM4502C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.
Features • N-Channel: VDS (V) =30V P-Channel: VDS (V) =-30V • Low on-state resistance N-Channel: RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A) RDS(on) = 20 mΩ MAX (VGS = 4.
5V, ID = 8.
4A) P-Channel: RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.
5A) RDS(on) = 33 mΩ MAX (VGS =-4.
5V, ID =-6.
8A) • Fast switching speed Absolute Maximum Ratings (Ta = 25℃) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) a SYMBOL N-Channel P-Channel UNIT VDSS VGSS 30 20 10 8.
1 ±50 -30 -25 -8.
5 -6.
8 ±50 V V A A TA=25℃ TA=70℃ b ID(DC) ID(pulse) Drain Current (pulse) Total Power Dissipation Channel Temperature Contnuous Source Current (Diode Conduction)a TA=25℃ a TA=70℃ IS PT Tch...


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