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BAT41

Vishay Siliconix
Part Number BAT41
Manufacturer Vishay Siliconix
Description Small Signal Schottky Diode
Published Dec 27, 2011
Detailed Description www.vishay.com BAT41 Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started...
Datasheet PDF File BAT41 PDF File

BAT41
BAT41

Overview
www.
vishay.
com BAT41 Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started Models Available FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage.
This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a MiniMELF case with type designation LL41 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx.
125 mg Cathode Band Color: black Packaging Codes/Options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAT41 ORDERING CODE BAT41-TR or BAT41-TAP CIRCUIT CONFIGURATION Single TYPE MARKING REMARKS BAT41 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1) tp < 1 s, δ < 0.
5 tp = 10 ms Tamb = 65 °C VRRM IF IFRM IFSM Ptot Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 100 100 350 750 200 UNIT V mA mA mA mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air Valid provided that electrodes are kept at ambient temperature RthJA Junction temperature Ambient operating temperature range Storage temperature range Tj Tamb Tstg VALUE 300 125 -65 to +125 -65 to +150 UNIT K/W °C °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN.
Reverse breakdown voltage (1) Leakage current (1) Forward voltage (1) Diode capacitance IR = 100 μA VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C IF = 1 mA IF = 200 mA VR = 1 ...


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