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2SC1317

Panasonic Semiconductor
Part Number 2SC1317
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1317 Silicon NPN epitaxial planar type ...
Datasheet PDF File 2SC1317 PDF File

2SC1317
2SC1317

Overview
Transistors This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1317 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0719  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Complementary pair with 2SA0719 TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V  Pin Name 1.
Emitter 2.
Collector 3.
Base Collector-emitter voltage (Base open) e pe) Emitter-base voltage (Collector open) c e.
d ty Collector current n d stag tinue Peak collector current a e cle con Collector power dissipation lifecy , dis Junction temperature n u duct typed Storage temperature VCEO 25 V VEBO 7 V IC 0.
5 A ICP 1 A PC 625 mW Tj 150 °C Tstg –55 to +150 °C te ting four Pcroontinued  Electrical Characteristics Ta = 25°C±3°C win dis Parameter Symbol Conditions Min Typ Max in n s follo laned Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 30 a o lude e, p Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 25 inc typ Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 M is iscon ainten Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 85 /D m hFE2 VCE = 10 V, IC = 500 mA 40 ce pe, Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA D tenan ce ty Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA ain nan Transition frequency fT VCB = 10 V, IE = –50 mA, f = 200 MHz M ainte Collector output capacitance m (Common base, input open circuited) Cre VCB = 10 V, IE = 0, f = 1 MHz 0.
1 340 0.
35 0.
60 1.
1 1.
5 200 6 15 ned Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(pla 2.
*: Rank classification Unit V V V mA  V V MHz pF Rank Q ...


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