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FM25L512

Ramtron
Part Number FM25L512
Manufacturer Ramtron
Description 3V F-RAM Memory
Published Dec 28, 2011
Detailed Description www.DataSheet.co.kr Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM •...
Datasheet PDF File FM25L512 PDF File

FM25L512
FM25L512

Overview
www.
DataSheet.
co.
kr Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 3.
0V – 3.
6V • 20 µA Standby Current Industry Standard Configurations • Industrial Temperature -40°C to +85°C • 8-pin “Green”/RoHS TDFN Package • Footprint Compatible with SOIC-8 (see pg 12) Description The FM25L512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process.
A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM.
It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L512 performs write operations at bus speed.
No write delays are incurred.
The next bus cycle may commence immediately without the need for data polling.
The next bus cycle may start immediately.
In addition, the product offers virtually unlimited write endurance.
Also, FRAM exhibits much lower power consumption than EEPROM.
These capabilities make the FM25L512 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation.
Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
The FM25L512 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement.
The FM25L512 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technolo...


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