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2SC1645S

Rohm
Part Number 2SC1645S
Manufacturer Rohm
Description High-gain Amplifier Transistor
Published Mar 22, 2005
Detailed Description www.DataSheet4U.com 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K / 2SC1645S zF...
Datasheet PDF File 2SC1645S PDF File

2SC1645S
2SC1645S

Overview
www.
DataSheet4U.
com 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor (32V , 0.
3A) 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD852K / 2SA830S.
zExternal dimensions (Unit : mm) 2SD1383K 2.
9 0.
4 (3) 1.
1 0.
8 zCircuit diagram (2) (1) 0.
95 0.
95 0.
15 1.
9 (1)Emitter B (2)Base (3)Collector Each lead has same dimensions RBE 4kΩ 2SC1645S E : Emitter B : Base C : Collector E 3.
0 4.
0 2.
0 (15Min.
) zPackaging specifications Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1383K SMT3 B W∗ T146 3000 2SC1645S SPT B − TP 5000 3Min.
0.
45 2.
5 5.
0 (1) (2) (3) 0.
5 0.
45 (1)Emitter (2)Collector (3)Base Taping specifications ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 6 0.
3 1.
5 0.
2 150 −55 to +150 Unit V ∗1 V V A (DC) A (Pulse) ∗2 W °C °C Collector current Collector power dissipation Junction temperature Storage temperature ∗1 RBE=0Ω ∗2 Single pulse Pw=10ms 0.
3Min.
C 1.
6 2.
8 Rev.
A 1/3 www.
DataSheet4U.
com 2SD1383K / 2SC1645S Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min.
40 32 6 − − 5000 − − − Typ.
− − − − − − − 250 5 Max.
− − − 1 1 − 1.
5 − − Unit V V V µA µA − V MHz pF Conditions IC=100µA IC= −1mA , RBE=0Ω IE=100µA VCB=24V VEB=4.
5V VCE=5V, IC=0.
1A IC=200mA, IB=0.
4mA ∗1 VCE=5V, IE= −10mA, f=100MHz ∗2 VCB=10V, IE=0A, f=1MHz zElectrical characteristic curves 125 500 POWER DISSIPATION : PC/PCMax (%) ...


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