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STW88N65M5

STMicroelectronics
Part Number STW88N65M5
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Jan 5, 2012
Detailed Description STW88N65M5, STWA88N65M5 Datasheet N-channel 650 V, 24 mΩ typ., 84 A MDmesh M5 PowerMOSFETs in TO-247 and TO-247 long lea...
Datasheet PDF File STW88N65M5 PDF File

STW88N65M5
STW88N65M5

Overview
STW88N65M5, STWA88N65M5 Datasheet N-channel 650 V, 24 mΩ typ.
, 84 A MDmesh M5 PowerMOSFETs in TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Features Order codes VDS STW88N65M5 STWA88N65M5 650 V • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested RDS(on) max.
29 mΩ ID 84 A G(1) S(3) AM01475v1_noZen Applications • High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Product status links STW88N65M5 STWA88N65M5 Product summary Order code STW88N65M5 Marking 88N65M5 Package TO-247 Packing Tube Order code STWA88N65M5 Marking 88N65M5 Package TO-247 long leads Packing Tube DS8771 - Rev 6 - April 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STW88N65M5, STWA88N65M5 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.
) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 84 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
Value ±25 84 50.
5 336 450 15 2000 15 -55 to 150 Symbol Rth...


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