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BU323

Inchange Semiconductor
Part Number BU323
Manufacturer Inchange Semiconductor
Description Silicon Darlington NPN Power Transistor
Published Jan 9, 2012
Detailed Description isc Silicon Darlington NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ...
Datasheet PDF File BU323 PDF File

BU323
BU323

Overview
isc Silicon Darlington NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.
) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W BU323 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA IC= 6 A; IB= 120mA IC= 10 A; IB= 300mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA VBE(sat)-2 VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC= 10 A; IB= 300mA IC= 10A ; VCE= 6V ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 6V hFE-2 DC Current Gain IC= 6A; VCE= 6V hFE-3 DC Current Gain IC= 10A; VCE= 6V VECF C-E Diode Forward Voltage IF= 10A COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz Switching Times ts Storage Time tf Fall Time VCC= 12V; IC= 6A, IB1= -IB2= 0.
3A BU323 MIN TYP MAX UNIT 350 V 1.
5 V 1.
7 V 2.
7 V 2.
2 V 3.
0 V 2.
5 V 1.
0 mA 40 mA 300 150 ...


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