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BU706DF

Part Number	BU706DF
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon NPN Power Transistor BU706DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·H...
Datasheet	BU706DF PDF File

Overview

isc Silicon NPN Power Transistor BU706DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current...

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