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GT100NA120UX

Vishay Siliconix
Part Number GT100NA120UX
Manufacturer Vishay Siliconix
Description IGBT
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES ...
Datasheet PDF File GT100NA120UX PDF File

GT100NA120UX
GT100NA120UX

Overview
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DataSheet.
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kr GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability SOT-227 • Fully isolated package • Speed 4 kHz to 30 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 1200 V 100 A at 71 °C 2.
36 V PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC ICM ILM IF VGE PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX.
1200 134 92 270 A 270 87 59 ± 20 463 260 W 338 190 2500 V V UNITS V Power dissipation, diode RMS isolation voltage PD VISOL Document Number: 93100 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com www.
vishay.
com 1 Datasheet pdf - http://www.
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kr GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) TEST CONDITIONS VGE = 0 V, IC = 1 mA VGE = 15 V, IC = 50 A Collector to emitter voltage VCE(on) VGE = 15 V, IC = 100 A VGE = 15 V, IC = 50 A, TJ = 125 °C VGE = 15 V, IC = 100 A,...


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