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IRFIZ14G

Vishay Siliconix
Part Number IRFIZ14G
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n...
Datasheet PDF File IRFIZ14G PDF File

IRFIZ14G
IRFIZ14G

Overview
www.
DataSheet.
co.
kr IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.
1 5.
8 Single D FEATURES 60 0.
20 • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • 175 °C Operating Temperature • Dynamic dv/dt Rating • Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIZ14GPbF SiHFIZ14G-E3 IRFIZ14G SiHFIZ14G ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS PD dV/dt TJ, Tstg LIMIT 60 ± 20 8.
0 5.
7 32 0.
18 47 27 4.
5 - 55 to + 175 300d 10 1.
1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 1.
47 mH, Rg = 25 ...


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