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SCH1430

Part Number	SCH1430
Manufacturer	Sanyo Semicon Device
Description	N-Channel Silicon MOSFET
Published	Jan 9, 2012
Detailed Description	www.DataSheet.co.kr Ordering number : ENA1949 SCH1430 SANYO Semiconductors DATA SHEET SCH1430 Features • • N-Chann...
Datasheet	SCH1430 PDF File

Overview

www.
DataSheet.
co.
kr Ordering number : ENA1949 SCH1430 SANYO Semiconductors DATA SHEET SCH1430 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.
8V drive Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm) Conditions Ratings 20 ±12 2 8 0.
8 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7028-002 1.
6 0.
05 0.
2 6 5 4 0.
2 Product & Package Information • Package : SCH6 • JEITA, JEDEC : SOT-563 • Minimum Packing Quantity : 5,000 pcs.
/reel Packing Type : TL Marking LOT No.
LOT No.
1.
6 1.
5 ZF 0.
05 1 2 0.
56 3 0.
5 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 Electrical Connection D D S 0.
25 D D G http://semicon.
sanyo.
com/en/network 42011PE TKIM TC-00002599 No.
A1949-1/4 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr SCH1430 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4.
5V ID=0.
5A, VGS=2.
5V ID=0.
3A, VGS=1.
8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See speciﬁed Test Circuit.
See speciﬁed Test Circuit.
See speciﬁed Test Circuit.
Se...

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