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SIHF510S

Vishay Siliconix
Part Number SIHF510S
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 9, 2012
Detailed Description www.vishay.com IRF510S, SiHF510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT...
Datasheet PDF File SIHF510S PDF File

SIHF510S
SIHF510S

Overview
www.
vishay.
com IRF510S, SiHF510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.
3 2.
3 3.
8 Single 0.
54 FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
 Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package.
The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface-mount application.
ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a.
See device orientation D2PAK (TO-263) SiHF510S-GE3 IRF510SPbF D2PAK (TO-263) SiHF510STRL-GE3 a IRF510STRLPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor (PCB mount) e Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power di...


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