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TIG111BF

Sanyo Semicon Device
Part Number TIG111BF
Manufacturer Sanyo Semicon Device
Description N-Channel Non Punch Through IGBT
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr Ordering number : EN9017A TIG111BF SANYO Semiconductors DATA SHEET TIG111BF Features • • • N-C...
Datasheet PDF File TIG111BF PDF File

TIG111BF
TIG111BF

Overview
www.
DataSheet.
co.
kr Ordering number : EN9017A TIG111BF SANYO Semiconductors DATA SHEET TIG111BF Features • • • N-Channel Non Punch Through IGBT High Power High Speed Switching Applications Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current (DC) Collector Current (Pulse) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VCES VGES ICc*1 IC*2 ICP PD Tj Tstg Limited by Tjmax Limited by Tjmax @Tc=25°C*3 @Tc=100°C*3 Conditions Ratings 600 ±30 23 11 5 92 2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 25 150 -55 to +150 Unit V V A A A A W W °C °C Pulse width Limited by Tjmax Note : *1 Shows chip capability *2 Collector current is calculated from the following for mula Tjmax - TC IC(TC)= Rth(j-c)×VCE(sat)max.
(Tjmax, IC(TC)) *3 SANYO’s condition is radiation from backside.
The metho...


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