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GA75TS120UPBF

Part Number	GA75TS120UPBF
Manufacturer	Vishay Siliconix
Description	Ultrafast Speed IGBT
Published	Jan 9, 2012
Detailed Description	www.DataSheet.co.kr GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A...
Datasheet	GA75TS120UPBF PDF File

Overview

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kr GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery • Industry standard package • UL approved file E78996 INT-A-PAK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 75 A, 25 °C 1200 V 110 A 2.
5 V BENEFITS • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, welding • Lower EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current See fig.
17 Peak diode forward current Gate to emitter voltage RMS isolation voltage Maximum power dissipation Operating junction temperature range Storage temperature range SYMBOL VCES IC ICM ILM IFM VGE VISOL PD TJ TStg Any terminal to case, t = 1 minute TC = 25 °C TC = 85 °C TC = 25 °C TC = 76 °C Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature TEST CONDITIONS MAX.
1200 110 75 150 150 150 ± 20 V 2500 390 W 200 - 40 to + 150 °C - 40 to + 125 A UNITS V Document Number: 94427 Revision: 03-May-10 For technical questions, contact: indmodules@vishay.
com www.
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com 1 Datasheet pdf - http://www.
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kr GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Collector to emitter leaking current Diode forward voltage Gate to emitter leakage current...

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