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BUX31B

Inchange Semiconductor
Part Number BUX31B
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 11, 2012
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= ...
Datasheet PDF File BUX31B PDF File

BUX31B
BUX31B

Overview
isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUX31 800 BUX31A 900 V BUX31B 1000 VCEO Collector-Emitter Voltage BUX31 400 BUX31A 450 V BUX31B 500 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth ...


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