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SI2305CDS

Vishay Siliconix
Part Number SI2305CDS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Jan 13, 2012
Detailed Description P-Channel 8 V (D-S) MOSFET Si2305CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V -...
Datasheet PDF File SI2305CDS PDF File

SI2305CDS
SI2305CDS

Overview
P-Channel 8 V (D-S) MOSFET Si2305CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
035 at VGS = - 4.
5 V -8 0.
048 at VGS = - 2.
5 V 0.
065 at VGS = - 1.
8 V ID (A)d - 5.
8 - 5.
0 - 4.
3 Qg (Typ.
) 12 nC TO-236 (SOT-23) G1 S2 3D Top View Si2305CDS (N5)* * Marking Code Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices • DC/DC Converter S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS -8 V VGS ±8 TC = 25 °C - 5.
8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 4.
7 - 4.
4a, b TA = 70 °C - 3.
5a, b A Pulsed Drain Current (10 µs Pulse Width) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS -...


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