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SI2399DS

Vishay Siliconix
Part Number SI2399DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Jan 15, 2012
Detailed Description www.DataSheet.co.kr SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The attached ...
Datasheet PDF File SI2399DS PDF File

SI2399DS
SI2399DS

Overview
www.
DataSheet.
co.
kr SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data a...


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