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SI4110DY

Vishay Siliconix
Part Number SI4110DY
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jan 15, 2012
Detailed Description www.DataSheet.co.kr New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS...
Datasheet PDF File SI4110DY PDF File

SI4110DY
SI4110DY

Overview
www.
DataSheet.
co.
kr New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.
013 at VGS = 10 V ID (A)a 17.
3 Qg (Typ.
) 35 nC FEATURES • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G • Primary Side Switch • Half Bridge • Intermediate Bus Converter D Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 80 ± 20 17.
3 13.
9 11.
7b, c 9.
4b, c 60 6.
5 3b, c 35 61.
3 7.
8 5 3.
6b, c 2.
3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 80 °C/W.
Document Number: 68766 S-81713-Rev.
A, 04-Aug-08 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr New Product Si4110DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconducta...


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