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SI4114DY

Part Number	SI4114DY
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Jan 15, 2012
Detailed Description	www.DataSheet.co.kr New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS...
Datasheet	SI4114DY PDF File

Overview

www.
DataSheet.
co.
kr New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.
006 at VGS = 10 V 0.
007 at VGS = 4.
5 V ID (A)a 20e 20e Qg (Typ.
) 27.
5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G • Low-Side MOSFET for Synchronous Buck - Game Machine - PC D Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free) Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 16 20e 18.
2 15.
2b, c 12.
1b, c 50 5.
1 2.
2b, c 30 45 5.
7 3.
6 2.
5b, c 1.
6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 18 Maximum 50 22 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 85 °C/W.
e.
Package limited.
Document Number: 68394 S09-0764-Rev.
B, 04-May-09 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr New Product Si4114DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Cu...

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SI4114DY N-Channel MOSFET - Vishay Siliconix

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