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SI5513CDC

Vishay Siliconix
Part Number SI5513CDC
Manufacturer Vishay Siliconix
Description MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20...
Datasheet PDF File SI5513CDC PDF File

SI5513CDC
SI5513CDC


Overview
www.
DataSheet.
co.
kr Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.
055 at VGS = 4.
5 V 0.
085 at VGS = 2.
5 V 0.
150 at VGS = - 4.
5 V 0.
255 at VGS = - 2.
5 V ID (A)a Qg (Typ.
) 4g 4g - 3.
7 - 2.
9 2.
6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC P-Channel - 20 3.
6 nC APPLICATIONS • Load Switch for Portable Devices D1 S2 1206-8 ChipFET® 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code EG XXX G1 Lot Traceability and Date Code S1 G2 Part # Code D2 P-Channel MOSFET Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 4g 4g 4b, c, g 3.
5b, c 10 2.
6 1.
4b, c 3.
1 2.
0 1.
7b, c 1.
1b, c P-Channel - 20 - 3.
7 - 3.
0 - 2.
4b, c - 1.
9b, c -8 - 2.
6 - 1.
7b, c 3.
1 2.
0 1.
3b, c 0.
8b, c Unit V A Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) - 55 to 150 260 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typ.
62 32 Max.
74 40 P-Channel Typ.
77 33 Max.
95 40 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
See Reliability Manual for profile.
The ChipFET is a leadless package.
The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be...


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