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SI6562CDQ

Vishay Siliconix
Part Number SI6562CDQ
Manufacturer Vishay Siliconix
Description MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V...
Datasheet PDF File SI6562CDQ PDF File

SI6562CDQ
SI6562CDQ

Overview
www.
DataSheet.
co.
kr New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.
022 at VGS = 4.
5 V 0.
036 at VGS = 2.
5 V 0.
030 at VGS = - 4.
5 V 0.
045 at VGS = - 2.
5 V ID (A) 6.
7 a FEATURES Qg (Typ.
) 6.
7 nC • Halogen-free • TrenchFET® Power MOSFETs 5.
2a - 6.
1a - 5.
0a RoHS APPLICATIONS COMPLIANT P-Channel - 20 17 nC • Load Switch • DC/DC Converter D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 D2 P-Channel MOSFET 8 7 6 5 D2 S2 S2 G2 G1 G2 Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 6.
7 4.
2 5.
7b, c 4.
5b, c 30 1.
3 0.
9b, c 1.
6 1.
0 1.
1b, c 0.
7b, c - 55 to 150 - 6.
1 - 4.
9 - 5.
1b, c - 4.
1b, c - 30 - 1.
4 - 1.
0b, c 1.
7 1.
1 1.
2b, c 0.
76b, c A P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS N-Channel Parameter t ≤ 10 s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a.
TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 145 °C/W.
Symbol RthJA RthJF Typ.
85 62 Max.
110 80 P-Channel Typ.
81 57 Max.
105 75 Unit °C/W Document Number: 68954 S-82575-Rev.
A, 27-Oct-08 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr New Product Si6562CDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) I...


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