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SI7774DP

Vishay Siliconix
Part Number SI7774DP
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUM...
Datasheet PDF File SI7774DP PDF File

SI7774DP
SI7774DP


Overview
www.
DataSheet.
co.
kr New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.
0038 at VGS = 10 V 0.
0047 at VGS = 4.
5 V ID (A)a 60 60 Qg (Typ.
) 21.
5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.
15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.
15 mm • VRM, POL, Server • Notebook - Low-Side D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS Limit 30 ± 20 60a 60a 27b, c 21b, c 80 60a 8b, c 40 80 48 31 5.
0b, c ...



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