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FDH5500_F085

Fairchild Semiconductor
Part Number FDH5500_F085
Manufacturer Fairchild Semiconductor
Description N-Channel UltraFET Power MOSFET
Published Jan 24, 2012
Detailed Description www.DataSheet.co.kr FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power M...
Datasheet PDF File FDH5500_F085 PDF File

FDH5500_F085
FDH5500_F085

Overview
www.
DataSheet.
co.
kr FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features „ Typ rDS(on) = 5.
2mΩ at VGS = 10V, ID = 75A „ Typ Qg(10) = 118nC at VGS = 10V „ Simulation Models -Temperature Compensated PSPICE and SABERTM Models „ Peak Current vs Pulse Width Curve „ UIS Rating Curve „ Related Literature -TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC Linear Mode Control „ Solenoid and Motor Control „ Switching Regulators „ Automotive Systems ©2008 Fairchild Semiconductor Corporation FDH5500_F085 Rev.
A1 1 www.
fairchildsemi.
com Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr FDH5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Drain to Source Voltage VDSS VDGR VGS ID EAS PD TL Tpkg Gate to Source Voltage Drain Current Continuous (TC < 135oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC Max.
Lead Temp.
for Soldering (at 1.
6mm from case for 10sec) Max.
Package Temp.
for Soldering (Package Body for 10sec) (Note 2) Parameter (Note 1) (Note 1) Ratings 55 55 ±20 75 See Figure 4 864 375 2.
5 -55 to + 175 300 260 o Units V V V A mJ W W/oC C Drain to Gate Voltage (RGS = 20kΩ) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 0.
4 30 oC/W o C/W Package Marking and Ordering Information Device Marking FDH5500 Device FDH5500_F085 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 50V, VGS = 0V VDS = 45...


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