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SS8PH10

Vishay Siliconix
Part Number SS8PH10
Manufacturer Vishay Siliconix
Description (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier
Published Jan 28, 2012
Detailed Description www.DataSheet.co.kr New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor High Current Density Sur...
Datasheet PDF File SS8PH10 PDF File

SS8PH10
SS8PH10

Overview
www.
DataSheet.
co.
kr New Product SS8PH9, SS8PH10 www.
vishay.
com Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifier FEATURES eSMP ® Series K • Very low profile - typical height of 1.
1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.
0 A IR TJ max.
8.
0 A 90 V, 100 V 150 A 20 mJ 0.
720 V 0.
18 μA 175 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.
0 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS8PH9 8H9 90 8.
0 150 20 - 55 to + 175 SS8PH10 8H10 100 V A A mJ °C UNIT Revision: 28-Jun-11 Document Number: 88989 1 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WI...


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