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IPSH6N03LAG

Infineon Technologies
Part Number IPSH6N03LAG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal f...
Datasheet PDF File IPSH6N03LAG PDF File

IPSH6N03LAG
IPSH6N03LAG

Overview
www.
DataSheet.
co.
kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 6 50 V mΩ A Type IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Package Marking PG-TO252-3-11 H6N03LA PG-TO252-3-23 H6N03LA PG-TO251-3-11 H6N03LA PG-TO251-3-1 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T ...


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