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2SC2859

Part Number	2SC2859
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Application...
Datasheet	2SC2859 PDF File

Overview

2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1182.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 35 V 30 V 5 V 500 mA 50 mA 150 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
t...

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