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V60200PGW

Vishay
Part Number V60200PGW
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr New Product V60200PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky ...
Datasheet PDF File V60200PGW PDF File

V60200PGW
V60200PGW

Overview
www.
DataSheet.
co.
kr New Product V60200PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TO-3PW PIN 1 PIN 3 PIN 2 CASE TMBS® TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 60 mH VF at IF = 30 A TJ max.
2 x 30 A 200 V 300 A 150 mJ 0.
77 V 150 °C MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified curret (fig.
1) per diode Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM EAS IRRM dV/dt TJ, TSTG SYMBOL VRRM V60200PGW 200 60 A 30 300 150 0.
5 10 000 - 40 to + 150 A mJ A V/μs °C UNIT V Document Number: 89184 Revision: 09-Feb-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
...


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