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V80100P

Vishay
Part Number V80100P
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr New Product V80100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Re...
Datasheet PDF File V80100P PDF File

V80100P
V80100P


Overview
www.
DataSheet.
co.
kr New Product V80100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
425 V at IF = 10 A FEATURES TMBS® • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 1 • Low thermal resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TJ max.
80 A 100 V 500 A 0.
667 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.
1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dV/dt TJ, TSTG V80100P 100 80 40 500 1.
0 10 000 - 40 to + 150 UNIT V A A A V/µs °C Document Number: 88979 Revision: 26-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.
com, PDD-Asia@vishay.
com, PDD-Europe@vishay.
com www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr New Product V80100P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.
0 mA IF = 10 A IF = 20 A IF = 40 A...



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