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VBT30L60C

Vishay
Part Number VBT30L60C
Manufacturer Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.vishay.com VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V...
Datasheet PDF File VBT30L60C PDF File

VBT30L60C
VBT30L60C

Overview
www.
vishay.
com VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
32 V at IF = 5.
0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT30L60C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 60 V IFSM 200 A VF at IF = 15 A 0.
45 V TJ max.
Package Circuit configuration 150 °C D2PAK (TO-263AB) Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available • Not recommended for PCB bottom side wave mounting • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: D2PAK (TO-263AB) Mold...


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