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VI20200C

Vishay
Part Number VI20200C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.vishay.com V20200C, VF20200C, VB20200C, VI20200C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier...
Datasheet PDF File VI20200C PDF File

VI20200C
VI20200C

Overview
www.
vishay.
com V20200C, VF20200C, VB20200C, VI20200C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
60 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20200C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TO-263AB K TO-262AA K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1 VB20200C PIN 1 K PIN 2 HEATSINK VI20200C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package 2 x 10 A 200 V 120 A 0.
68 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C Max.
repetitive peak reverse voltage Max.
average forward rectified current (fig.
1) per device per diode VRRM IF(AV) 200 20 10 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM 120 Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  per diode EAS 100 Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ...


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