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VF30100C

Vishay
Part Number VF30100C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Sc...
Datasheet PDF File VF30100C PDF File

VF30100C
VF30100C

Overview
New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
455 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB30100C PIN 1 K PIN 2 HEATSINK VI30100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
2 x 15 A 100 V 160 A 0.
63 V 150 °C FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30100C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min EAS IRRM dV/dt V...


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