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VI30150C

Vishay
Part Number VI30150C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Feb 2, 2012
Detailed Description www.vishay.com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier...
Datasheet PDF File VI30150C PDF File

VI30150C
VI30150C

Overview
www.
vishay.
com V30150C, VF30150C, VB30150C, VI30150C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
56 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF30150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1 VB30150C PIN 1 K 3 2 1 VI30150C PIN 1 PIN 2 PIN 2 HEATSINK PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 150 V 140 A 0.
71 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V30150C Max.
repetitive peak reverse voltage Max.
average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage ...


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