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2SC2982

Toshiba Semiconductor
Part Number 2SC2982
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Ap...
Datasheet PDF File 2SC2982 PDF File

2SC2982
2SC2982

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 140 (typ.
), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector po...


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