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SI4497DY

Part Number	SI4497DY
Manufacturer	Vishay
Description	P-Channel MOSFET
Published	Feb 11, 2012
Detailed Description	www.DataSheet.co.kr New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES ID (A)d - 36 - 29 Qg (...
Datasheet	SI4497DY PDF File

Overview

www.
DataSheet.
co.
kr New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES ID (A)d - 36 - 29 Qg (Typ.
) 90 nC PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.
0033 at VGS = - 10 V 0.
0046 at VGS = - 4.
5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Adaptor Switch • High Current Load Switch • Notebook 8 7 6 5 Top View Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D D D D G SO-8 S S S G 1 2 3 4 S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 20 - 36 - 29 - 24.
8a, b - 19.
2a, b - 70 - 6.
5 - 2.
9a, b - 30 45 7.
8 5.
0 3.
5a, b 2.
2a, b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 10 s.
c.
Maximum under Steady State conditions is 80 °C/W.
d.
Based on TC = 25 °C.
Document Number: 65748 S10-0639-Rev.
A, 22-Mar-10 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W www.
DataSheet.
co.
kr New Product Si4497DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source ...

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