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SI4666DY

Vishay
Part Number SI4666DY
Manufacturer Vishay
Description N-Channel MOSFET
Published Feb 11, 2012
Detailed Description www.DataSheet.co.kr Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.010...
Datasheet PDF File SI4666DY PDF File

SI4666DY
SI4666DY

Overview
www.
DataSheet.
co.
kr Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.
010 at VGS = 10 V 0.
011 at VGS = 4.
5 V 0.
014 at VGS = 2.
5 V ID (A)a 16.
5 15.
8 14 10.
7 nC Qg (Typ.
) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Buck Converter • DC/DC Converter SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D G D D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 25 ± 12 16.
5 9.
3 11.
5b,c 9.
4b,c 40 4.
5 2.
3b,c 15 11.
25 5 3.
2 2.
50b,c 1.
6b,c - 55 to 150 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Symbol t ≤ 10 s Steady State RthJA RthJF Typical 38 20 Maximum 50 25 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under steady state conditions is 85 °C/W.
Document Number: 66587 S10-1044-Rev.
A, 03-May-10 www.
vishay.
com 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr Si4666DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynam...


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