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IPD082N10N3G

Infineon Technologies
Part Number IPD082N10N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Feb 20, 2012
Detailed Description www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-c...
Datasheet PDF File IPD082N10N3G PDF File

IPD082N10N3G
IPD082N10N3G

Overview
www.
DataSheet.
co.
kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 252) ID 100 8.
2 80 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 * Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package Marking PG-TO220-3 086N10N PG-TO262-3 086N10N PG-TO263-3 083N10N PG-TO252-3 082N10N Maximum rating...


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