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PSMN069-100YS

NXP Semiconductors
Part Number PSMN069-100YS
Manufacturer NXP Semiconductors
Description N-channel LFPAK standard level MOSFET
Published Feb 28, 2012
Detailed Description www.DataSheet.co.kr PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev. 02 — 25 October 2010 Product...
Datasheet PDF File PSMN069-100YS PDF File

PSMN069-100YS
PSMN069-100YS

Overview
www.
DataSheet.
co.
kr PSMN069-100YS N-channel LFPAK 100 V 72.
4 mΩ standard level MOSFET Rev.
02 — 25 October 2010 Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.
3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state VGS = 10 V; ID = 5 A; resistance Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max Unit 100 17 56 175 130 V A W °C mΩ Static characteristics 56.
6 72.
4 mΩ Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr NXP Semiconductors PSMN069-100YS N-channel LFPAK 100 V 72.
4 mΩ standard level MOSFET Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 17 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Min Typ 4.
8 14 Max Unit nC nC Table 1.
Symbol QGD QG(tot) Dynamic characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 24 mJ 2.
Pinning information Table 2.
Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 ...


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