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SW30N06

Samwin
Part Number SW30N06
Manufacturer Samwin
Description N-channel MOSFET
Published Mar 5, 2012
Detailed Description www.DataSheet.co.kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate...
Datasheet PDF File SW30N06 PDF File

SW30N06
SW30N06

Overview
www.
DataSheet.
co.
kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.
036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.
036 ohm 2 1 1 2 3 1 2 3 2 3 1.
Gate 2.
Drain 3.
Source 1 General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology.
This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
These devices are widely used in AC-DC...


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