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MMA20312BT1

Freescale Semiconductor
Part Number MMA20312BT1
Manufacturer Freescale Semiconductor
Description Heterojunction Bipolar Transistor
Published Mar 5, 2012
Detailed Description Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Lineari...
Datasheet PDF File MMA20312BT1 PDF File

MMA20312BT1
MMA20312BT1

Overview
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.
It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE.
The amplifier is housed in a cost--effective, surface mount QFN plastic package.
 Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 1920 MHz 2010 MHz 2025 ...


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