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2SC3422

Toshiba Semiconductor
Part Number 2SC3422
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching ...
Datasheet PDF File 2SC3422 PDF File

2SC3422
2SC3422

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching 2SC3422 Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos.
• Good hFE linearity • Complementary to 2SA1359.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 40 V 40 V 5V 3A 1A 1.
5 W 10 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note1: Using continuously under heavy loads (e.
g.
the application of high Weight: 0.
82 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 40 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note 2) VCE = 2 V, IC = 0.
5 A hFE (2) VCE (sat) VCE = 2 V, IC = 2.
5 A IC = 2 A, IB = 0.
2 A VBE VCE = 2 V, IC = 0.
5 A fT VCE = 2 V, IC = 0.
5 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note 2: hFE (1) classification O: 80 to 160, Y: 120 to 240 Marking 2SC3422 Min Typ.
Max Unit ― ― 100 nA ― ― 100 nA 40 ― ― V...


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