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2SC3470

Hitachi Semiconductor
Part Number 2SC3470
Manufacturer Hitachi Semiconductor
Description Silicon NPN Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base...
Datasheet PDF File 2SC3470 PDF File

2SC3470
2SC3470

Overview
2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1.
Emitter 2.
Collector 3.
Base 2SC3470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob 1 Min 55 50 5 — — 250 — — — — Typ — — — — — — — — 230 1.
8 Max — — — 0.
5 0.
5 1200 0.
75 0.
2 — 3.
5 Un...


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