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HIT8550-N

Renesas
Part Number HIT8550-N
Manufacturer Renesas
Description PNP Transistor
Published Mar 13, 2012
Detailed Description HIT8550-N Silicon PNP Epitaxial Features • Low frequency power amplifier • Complementary pair with HIT8050-N Outline REN...
Datasheet PDF File HIT8550-N PDF File

HIT8550-N
HIT8550-N

Overview
HIT8550-N Silicon PNP Epitaxial Features • Low frequency power amplifier • Complementary pair with HIT8050-N Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G1610-0100 Rev.
1.
00 Nov 28, 2007 1.
Emitter 2.
Collector 3.
Base Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: PW ≤ 10 ms, Duty cycle ≤ 20% 3 2 1 Symbol VCBO VCEO VEBO IC IC (peak) Note PC Tj Tstg Ratings –45 –25 –6 –0.
7 –1 0.
625 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C REJ03G1610-0100 Rev.
1.
00 Nov 28, 2007 Page 1 of 4 HIT8550-N Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage (Ta = 25°C) Symbol Min.
Typ Max.
Unit Test Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) –45 –25 –6 — — 45 85 — — — — V IC = –10 µA, IE = 0 — — V IC = –1 mA, RBE = ∞ — — V IE = –10 µA, IC = 0 — –500 nA VCB = –45 V, IE = 0 — –500 nA VEB = –6 V — — — VCE = –1 V, IC = –5 mA — 330 — VCE = –1 V, IC = –100 mA — –0.
5 V IC = –500 mA, IB = –50 mA — –1.
0 V VCE = –3 V, IC = –10 mA Main Characteristics Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 1200 1000 800 600 400 200 0 0 50 100 150 Ambient Temperature Ta (°C) Collector Current IC (mA) -1000 -800 -600 -400 -200 Typical Output Characteristics PC = 625 mW -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA IB = 0 0 0 -0.
4 -0.
8 -1.
2 -1.
6 -2.
0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs.
Collector Current 300 250 Ta = 75°C 200 25°C -25°C 150 100 50 VCE ...


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