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2SC3583

Part Number	2SC3583
Manufacturer	NEC
Description	NPN Silicon Transistor
Published	Mar 22, 2005
Detailed Description	DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCR...
Datasheet	2SC3583 PDF File

Overview

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
PACKAGE DIMENSIONS (Units: mm) 2.
8±0.
2 0.
4 −0.
05 +0.
1 1.
5 0.
65 −0.
15 +0.
1 0.
95 0.
95 FEATURES • NF • Ga 1.
2 dB TYP.
13 dB TYP.
@f = 1.
0 GHz @f = 1.
0 GHz 2.
9±0.
2 2 ABSOLUTE MAXIM...

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