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2SC3623

Part Number	2SC3623
Manufacturer	NEC
Description	NPN SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SW...
Datasheet	2SC3623 PDF File

Overview

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.
0 V, IC = 1.
0 mA • Low VCE(sat): VCE(sat) = 0.
07 V TYP.
@IC/IB = 50 mA/5.
0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg Ratings 2SC3623 2SC3623A 60 50 12 15 150 250 150 −55 to +150 Unit V V V mA mW °C °C PACKAGE DRAWING (UNIT: mm) Electrode connection 1.
Emitter (E) 2.
Collector (C) 3.
Base (B) The information in this document is subject to change without notice.
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