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2SC3638

Part Number	2SC3638
Manufacturer	Sanyo Semicon Device
Description	NPN Triple Diffused Planar Silicon Transistor
Published	Mar 22, 2005
Detailed Description	Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizont...
Datasheet	2SC3638 PDF File

Overview

Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process.
Package Dimensions unit:mm 2022A [2SC3638] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg tf VCB=500V, IE=0 VCE=900V, RBE=0 IC=10...

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