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2SC3672

Part Number	2SC3672
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3672 2SC3672 High-Voltage Control Applications Pl...
Datasheet	2SC3672 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3672 2SC3672 High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm • High breakdown voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.
5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.
) • Complementary to 2SA1432.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg ...

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