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V10P12

Vishay
Part Number V10P12
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description www.vishay.com V10P12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schott...
Datasheet PDF File V10P12 PDF File

V10P12
V10P12

Overview
www.
vishay.
com V10P12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
51 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.
1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 ADDITIONAL RESOURCES 3D 3D...


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