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VBT2045BP

Vishay
Part Number VBT2045BP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description VBT2045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass P...
Datasheet PDF File VBT2045BP PDF File

VBT2045BP
VBT2045BP


Overview
VBT2045BP www.
vishay.
com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
33 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS PIN 1 PIN 2 K HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 20 A TOP max.
(AC mode) TJ max.
(DC forward current) 20 A 45 V 1...



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