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VFT1045CBP

Vishay
Part Number VFT1045CBP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description New Product VFT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Pro...
Datasheet PDF File VFT1045CBP PDF File

VFT1045CBP
VFT1045CBP

Overview
New Product VFT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
34 V at IF = 2.
5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max.
10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1045CBP PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A TOP max.
2 x 5.
0 A 45 V 100 A 0.
41 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per www.
DataSheet.
co.
kr MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig.
1) per diode Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Isolation voltage from termal to heatsink, t = 1 min Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.
2 bypass diode thermal test SYMBOL VRRM IF(AV) (1) IFSM VAC TOP, TSTG TJ (2) VFT1045CBP 45 10 A 5.
0 100 1500 - 40 to + 150 ≤ 200 A V °C °C UNIT V Document Number: 89367 Revision: 27-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com www.
vishay.
com 1 Datas...


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